Institute of Solid State Physics
Bulgarian Academy of Sciences

Home

Physicists

Funds

Donors

Exhibitions

Symposium

Jubilee

News

Video

References

Links

Services

Bookstore

Union of the Physicists in Bulgaria
Memoirs

Created 28.10.2008
Updated 26.2.2019

Protocols
Records
Certificates
BOOKS
PETAR CHRISTOV PEYKOV
private collection
Biography

Field of research interests: Semiconductors, microelectronics, sensors, nanotechnologies, numerical and statistical modeling of semiconductor devices and technologies, data mining

Year and place of birth: 1939, Sofia

Education: Petar Peykov graduated from Faculty of Physics, Sofia University St. Kl. Ohridsky in 1966. In 1973, he obtained PhD in Physics and Mathematics from the Institute of Semiconductors, Ukrainian Academy of Sciences, Kiev, Russia

Career: Institute of Physics, BAS - physicist; Institute of Solid State Physics, BAS - research associate; Institute of Microelectronics, Ministry of Electronics 1-st deputy director, senior research assistant of 2nd degree; Universidad Autnoma de Puebla, Mexico visiting professor; Instituto Nacional de Astrofsica, ptica i Electrnica senior researcher category C; SNI researcher level II; Faculty of Physics, Sofia University physicist

Teaching experience: He was lecturer more than 20 years in 8 different courses as: part time lecturer in the Faculty of Physics, Sofia University, visiting professor in the Universidad Autnoma de Puebla, Mexico and in the Instituto Nacional de Astrofsica, ptica i Electrnica, Mexico

Publications: Over 123 scientific articles, 2 monograph, 9 Bulgarian patents and 2 in Russia

  1. P. Peykov, Effects of some factors on pulse MOSC-t measurements, , 28, . 1323 (1975)

  2. P. Peykov, Photoelectric properties of MOS structures non-equilibrium conditions, , 28, . 1319 (1975)

  3. P. Peykov, Discharging of MNOS structures with thick oxide at higher temperatures, , 29, . 175 (1976)

  4. P. Peykov, On the nature of the negative charge in MNOS structures, , 29, . 171 (1976)

  5. P. Peykov, A. Vitkov, On the nature of the negative charge in MNOS structure, Comptes Rendus de l'ABS, 29(2) p. 171-173 (1976)

  6. P. Peykov, A. Vitkov, M. Kaminova, G. Beshkov, V. Lazarova, Discharging of MNOS structures with a thick oxide at higher temperature, Comptes Rendus de l'ABS, 29(2) p. 175-177 (1977)

  7. P. Peykov, The influence of process induced defects in the Si on surface charge in MOS structures, Thin solid films, 48(3) p. (1978)

Books

1985

Seventh Czechoslovak Conference of Electronics and Vacuum Physics. 3-6 September (1985)

Y. Hokari. Oxide breakdown reliability degradation on Si-gate metal-oxide-semiconductor structure by Al diffusion through polycrystalline silicon. - In: Journal of Applied Physics, volume 58 (1985) No 7, pp. 3536-3540 1983

Journal of Applied Physics, v. 54 (1983) No 7

Kinetics of interstitial supersaturation during oxidation of silicon. (1983)


1980

Dr P. Peykov Bulgarian Academy of Science, Institute of Solid State Physics. Wien, Institut fur Physikalische Elektronik der Technischen Universitat Wien, 4 Gusshausstrasse 27-29, A-1-40 Wien-Austria. (14.1.1980)

1979

I. C. Nash. Compact Numerical Methods for Computers linear algebra and function minimisation. Adam Hilger Ltd. Bristol (1979)

1976

Bakhvalov. Methodes numeriques. Moscow (1976)

1972

Tetsuya Iizuka. Calculation of the Si-SiO2 interface states. Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Engineering at the University of Tokyo, February 1972

1971

Piezoresonance in Quantize Conduction Band in Silicon Inversion Layers. Journal of Applied Physics, v. 42 (1971) No 5

1961

CW Laser Annealing of ion Implanted or Doped Polycristalline Silicon. Solid State Technologie (1961)

G. Grassl. Design for Testability. Siemens AG, Research Laboratiries, D-8000 Munchen 83, F. R. Germany

Articles

Back